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FDD6630ANL

Part No FDD6630ANL
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1058778-FDD6630ANL
Categories OEM Parts(F-I)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FDD6630ANL CAD Model

Description

The FDD6630ANL is an N-Channel PowerTrench® MOSFET manufactured by Fairchild/ON Semiconductor. This device is designed for high-efficiency power conversion in a wide array of applications. By leveraging advanced trench technology, it achieves a remarkably low on-resistance and minimal gate charge, resulting in exceptional power efficiency and rapid switching capabilities. It is commonly employed in synchronous rectification, DC-DC conversion, and power supplies where high performance is crucial.

Applications:

  • Synchronous Rectification in DC-DC converters
  • DC-DC Conversion
  • Power Supplies
  • Load Switching
  • Notebook Adapters

Features:

  • Ultra-Low On-Resistance: Minimizes conduction losses for superior efficiency.
  • Low Gate Charge: Reduces switching losses and enables faster switching speeds.
  • Avalanche Rated: Provides enhanced reliability and ruggedness.
  • 100% UIS Tested: Ensures robustness under inductive switching conditions.
  • RoHS Compliant: Environmentally friendly, meeting RoHS requirements.

Benefits:

  • High Efficiency: Reduced conduction and switching losses lead to increased overall efficiency.
  • Faster Switching: Enables higher frequency operation and smaller component sizes.
  • Improved Reliability: Robust design ensures stable and reliable performance in demanding applications.
  • Simplified Design: Logic level gate drive simplifies interfacing with control circuitry.
  • Environmentally Friendly: RoHS compliance minimizes environmental impact.

Additional Details:

The FDD6630ANL is particularly well-suited for synchronous rectification in DC-DC converters, where it significantly reduces conduction losses compared to traditional diodes. Its exceptionally low on-resistance and gate charge minimize both conduction and switching losses, resulting in higher overall efficiency. The avalanche rating and 100% UIS testing further enhance its reliability and suitability for demanding power management applications.

Specifications:

  • Polarity: N-Channel
  • Drain-Source Voltage (Vds): 30V
  • Gate-Source Voltage (Vgs): ±20V
  • Continuous Drain Current (Id): 18A
  • On-Resistance (Rds(on)): 0.0065Ω @ Vgs = 10V

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