The FDMA520PZTR is a P-Channel PowerTrench® MOSFET from Fairchild Semiconductor/ON Semiconductor, designed for load switch applications and optimized for battery management in portable devices.

Applications

• Load switch
• Battery protection
• Power management in portable devices (smartphones, tablets, laptops)
• DC-DC conversion

Features

• -2.5 A, -20 V RDS(on) = 0.095 Ω @ VGS = -4.5 V
• -2 A, -20 V RDS(on) = 0.130 Ω @ VGS = -2.5 V
• Low gate charge (typical 4.5 nC)
• High performance trench technology for extremely low RDS(ON)
• SuperSOT™-6 package: small footprint (2.0 x 2.1 mm)
• RoHS Compliant

Benefits

• Efficient power management: Low RDS(on) minimizes power loss and improves efficiency.
• Space-saving design: The SuperSOT™-6 package allows for high density board layouts.
• Extended battery life: Reduced power dissipation contributes to longer battery life in portable applications.
• Reliable performance: Fairchild's PowerTrench® technology ensures robust and consistent performance.
• Environmentally friendly: RoHS compliant, meeting environmental standards.

Additional Details

This P-Channel MOSFET utilizes Fairchild Semiconductor's advanced PowerTrench® process to achieve exceptionally low on-resistance (RDS(on)). This characteristic is critical for minimizing conduction losses and improving overall system efficiency, especially in battery-powered applications where energy conservation is paramount. The device's small SuperSOT™-6 package makes it suitable for densely populated circuit boards, enabling designers to create compact and efficient power management solutions.

The FDMA520PZTR is designed to handle a drain-source voltage of -20V and a continuous drain current of -2.5A. The pulsed drain current is rated at -12A. Its low gate charge contributes to faster switching speeds and reduced switching losses. The operating and storage junction temperature range is -55°C to +150°C.