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Same model may have multiple batches, images only for reference.
FDD5N53TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDD5N53TM

Part No FDD5N53TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET / N-Channel 530 V 4A (Tc) 40W (Tc) Surface Mount TO-252, (D-Pak)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Fairchild Semiconductor
Series PowerTrench®
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 530 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FAIFSCFDD5N53TM,2156-FDD5N53TM
Standard Package 1
Win Source Part Number 1110574-FDD5N53TM
Ultra Librarian 3D Model Ultra Librarian FDD5N53TM CAD Model

Description

The FDD5N53TM is an N-channel MOSFET transistor from Fairchild Semiconductor.

  • Series: PowerTrench
  • Package: TO-252-3, DPak
  • Mounting Technology: SMD (SMT)
  • Maximum Drain to Source Voltage (Vdss): 530 V
  • Continuous Drain Current (Id) @ 25°C (Tc): 4A
  • Maximum On-Resistance (Rds On) @ Id, Vgs: 1.5 Ohm @ 2A, 10V
  • Maximum Gate-Source Voltage (Vgs(th)) @ Id: 5V @ 250μA
  • Maximum Gate Charge (Qg) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) @ Vds: 640 pF @ 25 V
  • Power Dissipation (Max) @ Tc: 40W
  • Operating Temperature: -55°C to 150°C (TJ)
  • ECCN: EAR99

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