The FCH35N60C3 is a SuperFET® III MOSFET from Fairchild/ON Semiconductor. It is designed for high-voltage, high-speed switching applications, offering excellent performance and efficiency.

Applications:

• Power supplies
• Motor drives
• Lighting ballasts
• Uninterruptible power supplies (UPS)
• Solar inverters

Features:

• Low on-resistance (RDS(on))
• High avalanche energy
• Fast body diode recovery
• Low gate charge (Qg)
• Robust body diode
• RoHS Compliant

Benefits:

• Improved power efficiency
• Reduced switching losses
• Enhanced system reliability
• Simplified thermal management
• High power density

Additional Details:

The FCH35N60C3 is housed in a TO-220 package. It has a drain-source voltage (VDS) rating of 600V and a continuous drain current (ID) rating of typically 24A (at 25°C case temperature). Its low on-resistance minimizes conduction losses, while its fast switching speed reduces switching losses. The robust body diode provides excellent reverse recovery performance, making it suitable for applications with inductive loads. The low gate charge simplifies driving the MOSFET, reducing drive power requirements. It is suitable for hard switching topologies. The superior avalanche ruggedness allows it to withstand high energy pulses without failure.