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SDIN2B2-8G

Part No SDIN2B2-8G
Manufacturer Diodes Incorporated
Catalog EMMC
Description 8GB eMMC iNAND 169-FBGA
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 956211-SDIN2B2-8G
Series *
Ultra Librarian 3D Model Ultra Librarian SDIN2B2-8G CAD Model

Description

The SDIN2B2-8G is a high-performance NAND flash memory module from Diodes Incorporated, designed to meet the needs of high-speed and high-density storage solutions. This product offers a robust 8GB of storage capacity, making it an excellent choice for a wide range of applications, from embedded systems to mobile devices.

This NAND flash memory module is based on advanced Multi-Level Cell (MLC) technology, which allows for storing more data per cell compared to Single-Level Cell (SLC) technology, providing a cost-effective solution without compromising on performance. The SDIN2B2-8G is capable of delivering fast read and write speeds that are essential for applications requiring quick data access and reliable storage.

The SDIN2B2-8G module is designed with a focus on reliability and endurance. It features wear-leveling algorithms that evenly distribute data writes across the memory cells, significantly extending the lifespan of the flash memory. Additionally, built-in error correction code (ECC) ensures data integrity by detecting and correcting any potential errors that may occur during data transfer processes.

This memory module comes in a small form factor, making it suitable for space-constrained applications. It is also compatible with a wide range of operating temperatures, ensuring stable performance in various environments, from industrial to consumer applications. The SDIN2B2-8G operates with a supply voltage range that accommodates typical industry standards, allowing for easy integration into existing designs.

With its combination of high capacity, performance, and reliability, the SDIN2B2-8G NAND flash memory from Diodes Incorporated is an excellent choice for designers and manufacturers seeking a storage solution that can keep up with the demands of modern electronic devices.

Key Features:

  • 8GB storage capacity
  • Multi-Level Cell (MLC) NAND flash technology
  • High read/write speeds
  • Advanced wear-leveling and ECC for data integrity
  • Compact form factor
  • Wide operating temperature range
  • Standard supply voltage compatibility

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