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FZT653QTA

Part No FZT653QTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description PWR MID PERF TRANSISTOR SOT223 T / Bipolar (BJT) Transistor NPN 100 V 2 A 175MHz 1.2 W Surface Mount SOT-223-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V
Power - Max 1.2 W
Frequency - Transition 175MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-3
ECCN EAR99
HTSUS 8541.29.0075
Other Names 31-FZT653QTATR
Standard Package 1,000
Win Source Part Number 1060069-FZT653QTA
Ultra Librarian 3D Model Ultra Librarian FZT653QTA CAD Model

Description

Introducing the FZT653QTA from Diodes Incorporated

The FZT653QTA is a high-performance NPN bipolar transistor designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This transistor is part of Diodes Incorporated's extensive range of discrete, analog, and mixed-signal components tailored to meet the demanding requirements of electronic applications.

With its robust design, the FZT653QTA offers excellent power dissipation capabilities, making it suitable for a variety of power and switching applications. It is housed in an SOT-223 surface-mount package, which not only ensures a compact footprint but also provides enhanced thermal performance compared to traditional SOT-23 packages.

Key Features of the FZT653QTA:

  • Voltage and Current Ratings: This transistor supports a collector-base voltage (VCBO) of 160V, a collector-emitter voltage (VCEO) of 100V, and a continuous collector current (IC) of up to 3A, making it ideal for medium-power applications.
  • High hFE: The FZT653QTA boasts a high current gain (hFE) with a typical value of 100 at IC = 1A, which means it can be driven with low base currents to control larger collector currents, enhancing the efficiency of the circuit.
  • Fast Switching Speeds: Its fast switching response is suitable for high-frequency operations, ensuring that the device can be used in applications where rapid switching is crucial.
  • Thermal Performance: The superior thermal characteristics of the SOT-223 package allow for better heat dissipation, contributing to the reliability and longevity of the device under various operating conditions.

The FZT653QTA is a versatile component that can be implemented in a broad range of electronic circuits, including but not limited to, power management systems, amplifiers, and high-speed switching circuits. Its ability to handle significant voltage and current levels, coupled with its fast switching capabilities, makes it an excellent choice for designers looking to optimize their power circuitry.

Diodes Incorporated ensures that the FZT653QTA, like all their products, meets rigorous industry standards for quality and performance. Whether you're developing consumer electronics, automotive systems, or industrial equipment, the FZT653QTA provides the reliability and efficiency required for your advanced electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4945 $51.9225
220+ $0.4626 $101.7720
340+ $0.4467 $151.8780
485+ $0.4148 $201.1780
630+ $0.3988 $251.2440
785+ $0.3829 $300.5765
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 210 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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