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DMT6030LFCL-7

Part No DMT6030LFCL-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 41V~60V X1-DFN1616  /  N-Channel 60 V 6.5A (Ta) 780mW (Ta) Surface Mount U-DFN1616-6 (Type K)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 639 pF @ 30 V
Power Dissipation (Max) 780mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package U-DFN1616-6 (Type K)
Package / Case 6-PowerUFDFN
ECCN EAR99
HTSUS 8541.29.0095
Other Names 31-DMT6030LFCL-7TR
Standard Package 3,000
Win Source Part Number 1155806-DMT6030LFCL-7
Ultra Librarian 3D Model Ultra Librarian DMT6030LFCL-7 CAD Model

Description

DMT6030LFCL-7 MOSFET from Diodes Incorporated

The DMT6030LFCL-7 is a high-performance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and reliable components for power management applications across various industries.

This particular device is a part of the DMOS series, which is well-known for its low on-resistance and minimal gate charge, making it an excellent choice for high-efficiency power conversion tasks. The DMT6030LFCL-7 is designed to handle a continuous drain current of up to 60A, which makes it suitable for high-current applications. Its low threshold voltage ensures that it can be driven by low-voltage control circuits, increasing its versatility in different circuit designs.

The DMT6030LFCL-7 is housed in a PowerDI®3333-8 package, which is a compact and surface-mountable form factor. This package is designed to optimize both thermal and electrical performance, ensuring that the device can operate reliably even under high-stress conditions. The PowerDI®3333-8 package also allows for a smaller footprint on the PCB, providing more space for other components or enabling the design of smaller and more compact electronic devices.

Key features of the DMT6030LFCL-7 include:

  • Drain-Source Voltage (V<sub>DS) of 60V
  • Continuous Drain Current (I<sub>D) of 60A at 25°C
  • Low On-Resistance (R<sub>DS(on))
  • Fast Switching Speed
  • Low Gate Charge (Q<sub>G)
  • High Power and Current Handling Capability
  • RoHS Compliant

Applications for the DMT6030LFCL-7 MOSFET are diverse and include power supply circuits, DC-DC converters, motor drives, and other power-intensive applications where efficiency is crucial. The robustness and reliability of the DMT6030LFCL-7 make it an ideal choice for designers looking to create energy-efficient products without sacrificing performance.

Overall, the DMT6030LFCL-7 from Diodes Incorporated is a powerful MOSFET that offers a blend of efficiency, reliability, and compact form factor, making it a valuable component in any power management solution.

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