EN
  • EN
  • DE

DMT10H010LCT

Part No DMT10H010LCT
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CH 100V TO220AB / 100V N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 9.5mOhm at 13A, 10V
Vgs(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 71nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3000pF at 50V
Power Dissipation (Maximum) 2W , 139W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803442-DMT10H010LCT
Ultra Librarian 3D Model Ultra Librarian DMT10H010LCT CAD Model

Description

Introducing the DMT10H010LCT Power MOSFET by Diodes Incorporated

The DMT10H010LCT is a state-of-the-art power MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This device is designed specifically to cater to the needs of modern-day high-efficiency power conversion applications. With its remarkable electrical characteristics, the DMT10H010LCT stands out as a reliable and efficient component for a wide range of electronic devices.

Key Features

  • Low On-Resistance: The DMT10H010LCT boasts an exceptionally low on-resistance, which translates to reduced power loss and higher efficiency in power conversion processes. This feature is crucial for applications that require minimal energy waste.
  • High-Speed Switching: Designed for high-speed switching, this MOSFET can handle fast transitions, making it ideal for high-frequency applications. Quick switching not only improves performance but also contributes to the overall efficiency of the system.
  • PowerDI®5x6 Package: The device comes in a compact PowerDI®5x6 package, which is known for its small footprint and excellent thermal performance. This packaging technology allows for better heat dissipation and space-saving on PCBs.
  • Halogen-Free: In line with environmental standards, the DMT10H010LCT is a halogen-free product, reducing the potential environmental impact and ensuring compliance with current RoHS directives.

Applications

The versatility of the DMT10H010LCT allows it to be used in various applications, including:

  • DC/DC Converters
  • Power Management Systems
  • Motor Drives
  • Computing and Server Power Supplies
  • LED Lighting

Technical Specifications

With a continuous drain current of 10A and a drain-source voltage of 100V, the DMT10H010LCT is capable of handling significant power levels. Its threshold voltage is optimized for logic-level drive, making it compatible with low-voltage control circuits.

Conclusion

The DMT10H010LCT from Diodes Incorporated represents a blend of performance, efficiency, and environmental consciousness. Whether you are designing a new power system or seeking to improve an existing one, this power MOSFET is an excellent choice. Its cutting-edge features ensure it meets the demands of today's energy-conscious electronic designs, making it a valuable addition to any high-performance power conversion solution.

You May Also Be Interested in

Nexperia USA Inc.
MOSFET N-CH 60V 380MA DFN1006-3
Lowest to $0.0951
STMicroelectronics
DISCRETE
Lowest to $27.8572
Rohm Semiconductor
MOSFET P-CH 100V 1.5A TSMT6
Lowest to $0.5454
Rohm Semiconductor
MOSFET N-CH 100V 30A LPTS
Lowest to $1.9090
UMW
MOSFET N-CH 600V 4A DPAK
Lowest to $0.1284
Littelfuse Inc.
MOSFET N-CH 300V 94A TO268
Lowest to $40.9090
Littelfuse Inc.
MOSFET N-CH 1200V 6A TO268
Lowest to $13.9285
EPC
GANFET N-CH 100V 6A DIE OUTLINE
Lowest to $2.1546
Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR DSO
Lowest to $2.4545

Top Sellers

FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $5.7023
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0214
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.4542
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.2271
Vicor Corporation
DC DC CONVERTER 10-50V / 8V – 60VIN , 10V – 50VOUT , 50 – 140W Cool-Power ZVS Buck-Boost Regulator
Lowest to $41.3948
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7841
Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6071
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.7805
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.7805
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.1046
Altera
IC CPLD 128MC 10NS 100TQFP
Lowest to $3.3015
FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $4.5143
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess