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DMN63D1LDW-7

Part No DMN63D1LDW-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | MOSFET 2N-CH 60V 0.25A SOT363
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Tape and Reel
Part Status Last Time Buy
Transistor Polarity 2 N-Channel (Dual)
FET Feature Standard
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 250mA
Rds On (Maximum) at Id, Vgs 2Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 0.3nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 30pF at 25V
Maximum Power 310mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 714072-DMN63D1LDW-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN63D1LDW-7 CAD Model

Description

Introducing the DMN63D1LDW-7 Dual N-Channel MOSFET by Diodes Incorporated

The DMN63D1LDW-7 is a cutting-edge, dual N-Channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is part of their extensive range of discrete, analog, and mixed-signal components, tailored to meet the demanding requirements of electronic devices and systems.

Constructed with advanced trench technology, the DMN63D1LDW-7 offers superior performance with a focus on power efficiency and reliability. The dual N-Channel configuration makes it an ideal choice for applications where a compact footprint and efficient power management are essential. Its low on-resistance (R<sub>DS(on)) ensures minimal voltage drop and power loss, making it suitable for a variety of power switching applications.

Key Features:

  • Low On-Resistance: The device features a very low R<sub>DS(on), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High-Speed Switching: The DMN63D1LDW-7 is capable of high-speed switching operations, which is beneficial for high-frequency power conversion systems.
  • Low Gate Charge: The low gate charge (Q<sub>G) characteristic of this MOSFET enables faster switching and reduces power dissipation, which is critical in power-sensitive designs.
  • Compact Package: Housed in a small SOT-363 package, the DMN63D1LDW-7 is perfect for space-constrained applications, offering a dual MOSFET solution without compromising on performance.

Applications:

The versatility of the DMN63D1LDW-7 allows it to be used in a wide range of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Powered Devices
  • Load/Power Switching
  • Motor Control Systems

With its robust design and high-performance characteristics, the DMN63D1LDW-7 from Diodes Incorporated stands out as a superior choice for designers looking to optimize their power management and switching systems. Its integration into your electronic designs promises to enhance efficiency, reduce footprint, and ensure reliable operation under various conditions.

Discover the advantages of the DMN63D1LDW-7 for your next project and experience the exceptional quality and performance that Diodes Incorporated consistently delivers.

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