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DMMT5401-7-F

Part No DMMT5401-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 150V 0.2A SOT26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual) Matched Pair
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 60 @ 10mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Win Source Part Number 109478-DMMT5401-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMMT5401-7-F CAD Model

Description

Diodes Incorporated DMMT5401-7-F PNP Transistor

Introducing the DMMT5401-7-F, a high-performance PNP transistor from Diodes Incorporated, crafted to meet the needs of modern electronic applications. This transistor is part of a robust product line that Diodes Incorporated is renowned for, offering reliable and efficient performance in a compact package.

Key Features:

  • Type: PNP - The DMMT5401-7-F is a PNP type bipolar junction transistor (BJT), suitable for use in various switching and amplification applications.
  • Configuration: Dual - This device features a dual transistor configuration, providing two independent PNP transistors in a single package for space-saving and reduced component count.
  • Package: SOT-26 - The transistor comes in a small outline transistor (SOT-26) package, which is ideal for surface-mount technology (SMT) and offers excellent power handling capability relative to its size.
  • Collector-Emitter Voltage (Vceo): 150V - The DMMT5401-7-F can withstand up to 150 volts between its collector and emitter, making it suitable for high voltage applications.
  • Collector Current (Ic): 600 mA - With a collector current rating of 600 mA, this transistor can handle moderate power loads, suitable for a wide range of electronic circuits.
  • Power Dissipation (Pd): 300 mW - It is capable of dissipating 300 milliwatts of power, ensuring stable operation without overheating during normal usage.
  • DC Current Gain (hFE): 120 to 240 - The device offers a DC current gain range of 120 to 240, providing sufficient amplification for many electronic signal processing tasks.

Applications:

The DMMT5401-7-F is versatile and can be utilized in a variety of applications, including but not limited to:

  • Power Management
  • Signal Amplification
  • Switching Regulators
  • Motor Control Circuits
  • Audio Amplifiers

With its robust design and reliable performance, the DMMT5401-7-F from Diodes Incorporated is a great choice for designers and engineers looking for a PNP transistor that offers both efficiency and compactness. Whether for prototyping or mass production, this component is engineered to deliver consistent performance, making it a valuable addition to any electronic project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
435+ $0.1161 $50.5035
1,050+ $0.0953 $100.0650
1,630+ $0.0923 $150.4490
2,240+ $0.0893 $200.0320
2,895+ $0.0864 $250.1280
3,880+ $0.0774 $300.3120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 171,850 pieces
MOQ: 435 pcs
Order Increment : 1 pcs
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