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DMG6402LDM-7-F

Part No DMG6402LDM-7-F
Manufacturer Diodes Incorporated
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Categories Uncategorized
Manufacturer Diodes Incorporated
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 821807-DMG6402LDM-7-F
Ultra Librarian 3D Model Ultra Librarian DMG6402LDM-7-F CAD Model

Description

DMG6402LDM-7-F - Diodes Incorporated

The DMG6402LDM-7-F is a high-performance, dual N-channel enhancement mode field effect transistor (FET) from Diodes Incorporated, designed for power management applications. This compact device is part of the company's extensive range of semiconductor products and is engineered to deliver efficient power control and switching functionalities in a variety of electronic systems.

Key Features

  • Low On-Resistance: The DMG6402LDM-7-F boasts an exceptionally low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Continuous Drain Current: This transistor is capable of supporting a high continuous drain current (ID), making it suitable for handling significant power levels in applications such as DC-DC converters, power management devices, and motor controllers.
  • PowerDI3333-8 Package: Encased in a compact PowerDI3333-8 package, the DMG6402LDM-7-F is optimized for minimal footprint and profile, facilitating its integration into space-constrained applications while providing excellent thermal performance.
  • Halogen and Lead-Free: In alignment with modern environmental standards, this product is both halogen and lead-free, ensuring compliance with current RoHS directives and promoting the production of more environmentally friendly electronic components.

Applications

  • Power Management Systems
  • Load Switches
  • DC-DC Converters
  • Battery Management
  • Motor Control Circuits

The DMG6402LDM-7-F is designed with advanced trench MOSFET technology, which enhances its performance in terms of switching speed and reliability. Its dual N-channel configuration allows for flexibility in design, enabling engineers to use it in both synchronous and non-synchronous power conversion topologies. The device is characterized by its fast switching speeds and low gate charge (QG), which contribute to reduced switching losses and improved power efficiency.

With its robust construction and high-performance characteristics, the DMG6402LDM-7-F from Diodes Incorporated is an ideal choice for designers looking to optimize power efficiency and reliability in their next-generation electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2576 $57.9600
550+ $0.2114 $116.2700
850+ $0.2044 $173.7400
1,165+ $0.1987 $231.4855
1,510+ $0.1917 $289.4670
2,015+ $0.1721 $346.7815
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,600 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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