The Dallas Semiconductor DS1225AB Nonvolatile Static RAM (NVSRAM) is a 64kbit, fully static RAM organized as 8,192 words by 8 bits. It has a self-contained lithium energy source and control circuitry which constantly monitors VCC. If a power failure occurs, the device automatically write-protects itself, and retains data in the SRAM. The integrated lithium battery provides nonvolatility in the absence of power.

Applications:

• Industrial Controls
• Point-of-Sale Terminals
• Data Logging
• Remote Metering
• Medical Equipment
• Aerospace Systems

Features:

• 10 years minimum data retention in the absence of power.
• Unlimited write cycles.
• Low-power CMOS.
• Read and write access times as fast as 120ns.
• Lithium energy source is self-contained.
• Automatically power-down and write-protect when power fails.
• Replaces static RAM, EEPROM, and battery.
• Standard JEDEC pinout.
• Optional industrial temperature range available.

Benefits:

• Eliminates the need for external battery backup circuits, simplifying system design and reducing board space.
• Provides reliable data retention, preventing data loss during power outages.
• Offers fast access times, ensuring quick data retrieval and processing.
• Offers the convenience of unlimited write cycles compared to EEPROMs which have limited write endurance.
• Reduces power consumption due to low-power CMOS technology.

Additional Details:

The DS1225AB operates over a voltage range of 4.75V to 5.5V. The device features an automatic power-down function that reduces current consumption when not being accessed. The NVSRAM is available in a 28-pin DIP package. The device can be used in a wide range of applications where nonvolatile data storage is required.