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2N5339

Part No 2N5339
Manufacturer Central Semiconductor Corp
Catalog Transistors (BJT) - Single
Description Chip Type 2C5154 Geometry 9201 Polarity NPN | SILICON NPN TRANSISTORS
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Central Semiconductor Corp
Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Maximum) 5A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) at Ib, Ic 1.2V at 500mA, 5A
Current - Collector Cutoff (Maximum) 100μA
DC Current Gain (hFE) (Minimum) at Ic, Vce 60 at 2A, 2V
Maximum Power 6W
Frequency - Transition 30MHz
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1123956-2N5339
Manufacturer Homepage www.semicoa.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N5339 CAD Model

Description

The Central Semiconductor Corp 2N5339 is an NPN transistor that is mounted through hole.

  • Frequency Transition: 30MHz
  • Category: Discrete Semiconductor Products
  • Supplier Device Package: TO-39
  • Product Status: Obsolete
  • Temperature Range: -65°C ~ 200°C
  • Manufacturer Homepage: www.semicoa.com/
  • Manufacturer Package: TO-205AD, TO-39-3 Metal Can
  • Current-Collector (Ic) (Maximum): 5A
  • Voltage-Collector Emitter Breakdown (Maximum): 100V
  • Current-Collector Cutoff (Maximum): 100μA
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 500
  • MSL Level: 1 (unlimited)
  • Vce Saturation (Maximum) @ Ib, Ic: 1.2V @ 500mA, 5A
  • DC Current Gain (hFE) (Minimum) @ Ic, Vce: 60 @ 2A, 2V
  • Maximum Power: 6W

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