The ON Semiconductor MJ11012G is a high-power Bipolar Junction Transistor (BJT) designed to handle substantial current and voltage levels, making it an ideal choice for a wide range of applications requiring robust performance. This silicon transistor is part of the PowerBase™ power transistors series, which are well-known for their reliability and efficiency in power switching and amplification tasks.
Key Features:
- High Current Capacity: With a collector current rating of 30A, the MJ11012G can handle high current applications with ease.
- High Voltage Tolerance: This transistor can withstand up to 120V across the collector-emitter junction, providing a good margin for applications with high voltage requirements.
- Low Saturation Voltage: The low collector-emitter saturation voltage ensures efficient operation with minimal power loss, which is critical for power management in high-current circuits.
- Complementary PNP Type Available: For applications requiring a push-pull configuration, the MJ11012G has a complementary PNP type, allowing for easy implementation of efficient and balanced circuit designs.
- Robust Package: Housed in a TO-3 case, the MJ11012G offers a robust and reliable package that ensures mechanical stability and efficient heat dissipation.
Applications:
The MJ11012G is suitable for a broad spectrum of applications, including:
- Power supply regulators
- Motor controllers
- Audio amplifiers
- Switching circuits
- Linear amplifiers
- And other high-power, high-voltage applications
Technical Specifications:
Parameter
Value
Collector-Emitter Voltage (V<sub>CEO)
120V
Collector Current (I<sub>C)
30A
Power Dissipation (P<sub>D)
200W
Operating Junction Temperature (T<sub>J)
-65 to +200°C
Package Type
TO-3
With its robust capabilities, the MJ11012G from ON Semiconductor is a reliable component for designers seeking to integrate a high-performing power transistor into their systems.
