The 2N3860 is a silicon NPN transistor manufactured by Central Semiconductor Corp. This transistor is designed for high-speed switching and amplifier applications. Known for its robust construction and reliable performance, the 2N3860 is a versatile component suitable for a range of electronic circuits.

Applications

• High-speed switching circuits
• Small signal amplification
• Oscillator circuits
• Driver stages for higher power transistors
• General-purpose amplifier applications

Features

• NPN Silicon Transistor
• High Collector-Emitter Breakdown Voltage (VCEO)
• High Transition Frequency (fT)
• Low Collector-Base Capacitance
• High DC Current Gain (hFE)
• RoHS Compliant

Benefits

• Enables fast switching speeds in digital circuits.
• Provides excellent signal amplification with minimal distortion.
• Offers stable performance across a wide range of operating conditions.
• Reduces power consumption in high-frequency applications.
• Ensures reliable operation in demanding environments.

Technical Specifications

The 2N3860 features a Collector-Emitter Breakdown Voltage (VCEO) of typically 40V. The Collector Current (IC) is rated at 200mA. The DC Current Gain (hFE) typically ranges from 20 to 100 depending on the operating conditions. It has a Transition Frequency (fT) of around 100 MHz, making it suitable for high-frequency applications. The operating and storage temperature range is typically from -65°C to +200°C.

It is typically packaged in a TO-18 metal can package.