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CAT28C256N-12T

Part No CAT28C256N-12T
Manufacturer Catalyst Semiconductor
Catalog END - OF - LIFE
Description 32K-Bit Parallel E2PROM
Sample
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Manufacturer Catalyst Semiconductor
Win Source Part Number 1159004-CAT28C256N-12T
Manufacturer Homepage www.catalyst-semiconductor.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CAT28C256N-12T CAD Model

Description

The CAT28C256N-12T is a 256K CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory) manufactured by Catalyst Semiconductor. This EEPROM is organized as 32,768 x 8 bits. It offers non-volatile storage, meaning that data is retained even when power is removed. It is a parallel EEPROM, allowing for fast read and write operations.

Applications

  • Embedded Systems
  • Industrial Controllers
  • Data Logging
  • Networking Equipment
  • Telecommunications

Features

  • 256Kbit (32K x 8) Organization
  • Fast Access Time (120ns)
  • TTL Compatible Inputs and Outputs
  • Automatic Page Write Operation
  • Data Protection Features

Benefits

  • Reliable non-volatile memory
  • High-speed read/write operations
  • Easy interface with microprocessors and microcontrollers
  • Reduces system complexity
  • Protects against data loss

The CAT28C256N-12T is characterized by its fast access time, making it suitable for applications requiring quick data retrieval. The TTL compatible inputs and outputs simplify interfacing with a wide range of digital systems. The automatic page write operation allows for efficient writing of data blocks, further enhancing performance. Data protection features safeguard against accidental data corruption or loss, ensuring data integrity.

This EEPROM is commonly used in embedded systems, industrial controllers, and networking equipment to store configuration settings, boot code, and other critical data. Its high reliability and performance make it a valuable component in applications where data integrity and speed are paramount. The CAT28C256N-12T provides a robust and reliable solution for non-volatile memory requirements.

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