The CFH120-06 is a silicon carbide (SiC) Schottky diode manufactured by Infineon Technologies. These diodes are designed for high-performance power factor correction (PFC) and other high-voltage, high-frequency applications. SiC diodes offer significant advantages over traditional silicon diodes, including lower reverse recovery charge, temperature-independent switching behavior, and higher surge current capability.

Applications

• Power factor correction (PFC) circuits in power supplies
• Boost converters
• Motor drives
• Solar inverters
• Uninterruptible power supplies (UPS)
• Welding equipment

Features

• Silicon Carbide Schottky Diode
• 600V Reverse Voltage
• 12A Continuous Forward Current
• Zero Reverse Recovery Current
• Temperature-independent switching behavior
• High Surge Current Capability
• RoHS compliant

Benefits

• Increased Efficiency: The zero reverse recovery current minimizes switching losses, leading to higher overall efficiency in power conversion applications.
• Reduced EMI: Faster switching speeds and lower reverse recovery charge contribute to reduced electromagnetic interference (EMI).
• Improved Reliability: The SiC material enables operation at higher temperatures and provides greater robustness.
• Simplified Design: The temperature-independent switching behavior simplifies the design process and reduces the need for complex compensation circuitry.
• Higher Power Density: The ability to operate at higher frequencies allows for smaller and lighter passive components, leading to increased power density.

Technical Specifications

The CFH120-06 features a reverse voltage rating of 600V and a continuous forward current rating of 12A. Its typical forward voltage drop is approximately 1.7V at the rated current. The device is typically packaged in a TO-220 or similar through-hole package. Key electrical characteristics include a zero reverse recovery current (Qr) and a very fast reverse recovery time (trr). The operating junction temperature ranges from -55°C to +175°C. The surge current capability is significantly higher than comparable silicon diodes, providing enhanced protection against transient events.