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Manufacturer Anpec
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 817623-APM1102PUC-TRG
Ultra Librarian 3D Model Ultra Librarian APM1102PUC-TRG CAD Model

Description

The APM1102PUC-TRG is a P-channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Anpec Electronics. It is designed for load switching and power management applications. Its low on-resistance and fast switching speed make it efficient in various electronic circuits.

Applications:

  • Load Switching
  • Power Management
  • DC-DC Converters
  • Battery Management Systems
  • Portable Devices

Features:

  • P-Channel MOSFET
  • Low On-Resistance: Reduces power loss and improves efficiency.
  • Fast Switching Speed: Enables quick transitions in switching applications.
  • Logic-Level Gate Drive: Allows direct drive from logic circuits.
  • Surface Mount Package: Facilitates automated assembly and reduces board space.
  • RoHS Compliant

Benefits:

  • High Efficiency: Low on-resistance minimizes power dissipation, leading to higher efficiency.
  • Fast Response: Fast switching speed allows for quicker response times in switching circuits.
  • Simplified Design: Logic-level gate drive simplifies the design of driving circuits.
  • Compact Size: The surface mount package saves board space.
  • Improved Thermal Performance: Efficient heat dissipation enhances overall reliability.

Technical Specifications:

  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): -3.8A
  • On-Resistance (RDS(on)): 55 mΩ at VGS = -4.5V
  • Gate Threshold Voltage (VGS(th)): -0.45V to -0.95V
  • Power Dissipation (PD): 1.25W
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23

The APM1102PUC-TRG is an efficient P-channel MOSFET suited for various load switching and power management applications. Its low on-resistance, fast switching speed, and logic-level gate drive make it an excellent choice for portable devices and other applications where efficiency and space are critical.

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