The AM30N20-78D is an N-Channel enhancement mode power MOSFET from Analog Power. Leveraging advanced trench MOSFET technology, this component is engineered for minimal on-state resistance (RDS(on)) and gate charge (Qg), resulting in superior switching performance and high efficiency. It is particularly well-suited for use in high-efficiency power management applications.

Applications:

• Synchronous Rectification in AC/DC and DC/DC Converters
• Power Inverters
• Motor Control
• DC-DC converters
• Load Switching

Features:

• Low RDS(on) for reduced conduction losses
• Low gate charge (Qg) for efficient switching
• High avalanche ruggedness
• Fast switching speed
• Lead-free and RoHS compliant

Benefits:

• Enhanced system efficiency
• Reduced power dissipation for smaller heat sink requirements
• Increased reliability due to lower operating temperatures
• Simplified thermal management
• Environmentally friendly construction

Additional Details:

The AM30N20-78D is supplied in a TO-252 or similar surface mount package. Key electrical parameters include a drain-source voltage (VDS) of 200V, a continuous drain current (ID) of up to 30A (depending on package and operating environment), and a typical RDS(on) of 0.078 Ohms at VGS = 10V. This MOSFET is designed for operation across a broad temperature range.

This device is optimal for applications needing high efficiency, rapid switching, and dependable performance. The low on-resistance minimizes conduction losses, while the low gate charge ensures quick switching and reduces related losses. Its robust avalanche rating provides protection against voltage spikes, increasing overall system robustness.