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Same model may have multiple batches, images only for reference.
AOWF8N50 Real Image
Same model may have multiple batches, images only for reference.

AOWF8N50

Part No AOWF8N50
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 8A TO262F / N-Channel 500 V 8A (Tc) 27.8W (Tc) Through Hole TO-262F
Datasheet
AOWF8N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Alpha & Omega Semiconductor Inc.
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1042 pF @ 25 V
Power Dissipation (Max) 27.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262F
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number AOWF8
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 1001984-AOWF8N50
Ultra Librarian 3D Model Ultra Librarian AOWF8N50 CAD Model

Description

The AOWF8N50 is a N-Channel MOSFET (Metal Oxide) electronic component manufactured by Alpha & Omega Semiconductor Inc.

  • Supply and Demand Status: Balance
  • Win Source Part Number: 1001984-AOWF8N50
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id): 8A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250μA
  • Power Dissipation (Max): 27.8W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V

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