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Same model may have multiple batches, images only for reference.
AOWF4S60 Real Image
Same model may have multiple batches, images only for reference.

AOWF4S60

Part No AOWF4S60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description 600V 4A a MOS TM Power Transistor
Datasheet
AOWF4S60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Series aMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 6nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 263pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 25W (Tc)
Rds On (Maximum) @ Id, Vgs 900 mOhm @ 2A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1145081-AOWF4S60
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Limited
Family Name AOWF4S60
Introduction Date May 03, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian AOWF4S60 CAD Model

Description

The Alpha & Omega Semiconductor Inc. aMOS series MOSFET is a high-performance, N-channel type transistor that operates @ a drain-source voltage of 600V.

  • Drain Current (Max): 4A
  • Power Dissipation (Max): 25W (Tc)
  • Gate Charge (Qg): 6nC @ 10V
  • Input Capacitance (Ciss): 263pF @ 100V
  • Rds On (Maximum) @ Id, Vgs: 900 mOhm @ 2A, 10V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Applications: Power Supplies, Motor Control, and Lighting

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