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Same model may have multiple batches, images only for reference.
AOTF600A70L Real Image
Same model may have multiple batches, images only for reference.

AOTF600A70L

Part No AOTF600A70L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 8.5A TO220F / N-Channel 700 V 8.5A (Tj) 27W (Tc) Through Hole TO-220F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Alpha & Omega Semiconductor Inc.
Series aMOS5™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 100 V
Power Dissipation (Max) 27W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Base Product Number AOTF600
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 785-AOTF600A70L
Standard Package 50
Win Source Part Number 1045206-AOTF600A70L
Ultra Librarian 3D Model Ultra Librarian AOTF600A70L CAD Model

Description

The aMOS5™ MOSFET is a high-performance N-channel FET designed for use in discrete semiconductor products.

  • Drain to Source Voltage: 700V
  • Continuous Drain Current: Up to 8.5A @ Tj
  • Rds On: 600mOhm @ 2.5A and 10V
  • Package: TO-220-3 full pack package
  • Mounting: Through-Hole
  • Gate Charge: 15.5 nC @ 10V
  • Input Capacitance: 870 pF @ 100V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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