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Same model may have multiple batches, images only for reference.
AOT15B65M1 Real Image
Same model may have multiple batches, images only for reference.

AOT15B65M1

Part No AOT15B65M1
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog IGBTs - Single
Description IGBT 650V 15A TO220 / Trans IGBT Chip N-CH 650V 30A 214000mW 3-Pin(3+Tab) TO-220 Tube
Datasheet
AOT15B65M1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Series Alpha IGBT
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 30A
Current - Collector Pulsed (Icm) 45A
Vce(on) (Maximum) @ Vge, Ic 2.15V @ 15V, 15A
Power - Max 214W
Switching Energy 290μJ (on), 200μJ (off)
Input Type Standard
Gate Charge 32nC
Td (on/off) @ 25°C 13ns/116ns
Test Condition 400V, 15A, 20 Ohm, 15V
Reverse Recovery Time (trr) 317ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-220-3
Manufacturer Package TO-220
Win Source Part Number 768567-AOT15B65M1
Popularity Medium
Supply and Demand Status Balance
Family Name AOT15B65M1
Introduction Date June 02, 2015
ECCN EAR99
Country of Origin China
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian AOT15B65M1 CAD Model

Description

The Alpha & Omega Semiconductor Inc. Alpha IGBT TO-220-3 package is a high-performance N-channel MOSFET designed for various applications. With the following specifications:

  • Maximum Power: 214W
  • Voltage Collector-Emitter Breakdown: 650V
  • Maximum Vce(on): 2.15V @ 15V, 15A
  • Gate Charge: 32nC
  • Family Name: AOT15B65M1
  • Current Collector: 30A
  • Switching Energy: 290μJ (on), 200μJ (off)
  • Halogen-Free: Yes
  • Estimated EOL Date: 2028

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