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Same model may have multiple batches, images only for reference.
AOD1R4A70 Real Image
Same model may have multiple batches, images only for reference.

AOD1R4A70

Part No AOD1R4A70
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 3.8A TO252 / N-Channel 700 V 3.8A (Tc) 48W (Tc) Surface Mount TO-252 (DPAK)
Datasheet
AOD1R4A70 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Alpha & Omega Semiconductor Inc.
Series aMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 354 pF @ 100 V
Power Dissipation (Max) 48W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number AOD1R4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 785-1817-6,785-1817-2,785-1817-1
Standard Package 2,500
Win Source Part Number 1156508-AOD1R4A70
Ultra Librarian 3D Model Ultra Librarian AOD1R4A70 CAD Model

Description

The AOD1R4A70 is a MOSFET (Metal Oxide) transistor manufactured by Alpha & Omega Semiconductor Inc.

  • FET Type: N-Channel
  • Win Source Part Number: 1156508
  • Package: TO-252-3, DPak
  • Gate Charge: 8 nC @ 10 V

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