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AO4800A

Part No AO4800A
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Hard To Find
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Alpha & Omega Semiconductor Inc.
Win Source Part Number 1144801-AO4800A
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AO4800A CAD Model

Description

The AO4800A is a N-Channel MOSFET manufactured by Alpha & Omega Semiconductor. This MOSFET is designed for a variety of power switching applications, particularly where efficiency and compact size are crucial.

Applications

  • DC-DC Converters: Used as a switching element in DC-DC converters for efficient voltage regulation.
  • Load Switching: Suitable for switching power to various loads in electronic circuits.
  • Power Management in Portable Devices: Found in laptops, smartphones, and other portable devices.
  • Battery Management Systems: Used in battery charging and discharging circuits.
  • Motor Control: Applicable in low-power motor control applications.

Features

  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction, enhancing efficiency.
  • Low Gate Charge (Qg): Reduces switching losses for improved performance.
  • Avalanche Rated: Provides robustness against voltage transients.
  • TrenchFET® Technology: Utilizes Alpha & Omega's advanced TrenchFET technology.
  • 100% UIS Tested: Undergoes rigorous testing to ensure avalanche capability.
  • RoHS Compliant: Meets RoHS requirements for environmental compliance.

Benefits

  • High Efficiency: Results in efficient power conversion with minimal losses.
  • Fast Switching Speed: Enables high-frequency operation for compact designs.
  • Enhanced Reliability: Robust design withstands voltage transients.
  • Simplified Thermal Management: Lower power losses reduce heat generation.
  • Environmentally Friendly: RoHS compliance supports sustainable designs.

Additional Details

The AO4800A typically comes in a SO-8 package. The drain-source voltage (Vds), gate-source voltage (Vgs), and continuous drain current (Id) are critical parameters to consider for specific applications. Proper thermal considerations are important for optimal performance. The gate threshold voltage (Vgs(th)) needs to be considered for selecting appropriate drive circuitry. Datasheet parameters must be carefully reviewed before implementation.

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