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APE8805N-33

Part No APE8805N-33
Manufacturer Advanced Power Electronics Corp.
Catalog Hard To Find
Description 600mA LOW DROPOUT LINEAR REGULATOR
Sample
Rohs State rohs
ECAD Module
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Manufacturer Advanced Power Electronics Corp.
Win Source Part Number 1146322-APE8805N-33
Manufacturer Homepage www.a-power.com.tw
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian APE8805N-33 CAD Model

Description

The APE8805N-33 is a P-Channel enhancement-mode MOSFET manufactured by Advanced Power Electronics Corp. It's designed for use in power management applications requiring efficient and controlled switching. The '-33' suffix likely refers to the Vgs(th) characteristic voltage of -3.3V. This MOSFET utilizes advanced trench technology to achieve low on-state resistance (RDS(on)) and low gate charge, contributing to overall system efficiency.

Applications:

  • Load Switching: Used to switch power to various loads in electronic devices.
  • Power Management Circuits: DC-DC converters, voltage regulators
  • Battery Management Systems: Used in battery charging and discharging circuits
  • Portable Devices: Smartphones, tablets, laptops
  • LED Lighting: Driving and controlling LED current

Features:

  • P-Channel MOSFET: Suitable for applications requiring a negative gate-source voltage.
  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction.
  • Low Gate Charge (Qg): Reduces switching losses and improves efficiency.
  • Trench Technology: Provides high current density and low RDS(on).
  • Surface Mount Package: Allows for efficient board assembly and space utilization.

Benefits:

  • High Efficiency: Reduces power consumption and extends battery life.
  • Fast Switching Speed: Enables high-frequency operation.
  • Compact Design: Facilitates miniaturization of electronic devices.
  • Improved Thermal Performance: Dissipates heat efficiently.
  • Reliable Operation: Offers stable and consistent performance.

Additional Details:

The APE8805N-33 is typically available in surface-mount packages such as SOP or DFN. Key specifications include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and power dissipation (PD). It is essential to consult the official datasheet to obtain precise electrical characteristics, thermal resistance values, and safe operating area (SOA) graphs to ensure proper application and prevent damage to the device. The low RDS(on) of this MOSFET is a crucial parameter for minimizing power loss in switching applications, contributing to overall system efficiency. Advanced Power Electronics Corp. is a reputable manufacturer, and this device is expected to deliver reliable performance in a variety of power management systems.

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