The ZXMN3A04DN8 is a dual N-channel enhancement mode MOSFET manufactured by Zetex Semiconductors (now Diodes Incorporated). It is designed for low voltage, high-speed switching applications such as DC-DC converters, power management, and load switching. The device features low on-resistance and is available in a small surface-mount package.

Applications

• DC-DC Converters
• Power Management
• Load Switching
• Motor Control
• Backlighting

Features

• Dual N-Channel MOSFET: Integrates two N-channel MOSFETs in a single package.
• Low On-Resistance (RDS(on)): Minimizes power loss during conduction.
• High-Speed Switching: Suitable for high-frequency switching applications.
• Logic Level Gate Drive: Can be driven directly from logic-level signals.
• Surface Mount Package: Available in an SO-8 package.

Benefits

• Space Saving: Integrates two MOSFETs in a single package, reducing board space.
• High Efficiency: Low on-resistance minimizes power dissipation.
• Fast Switching: Supports high-frequency switching for efficient power conversion.
• Logic Level Compatibility: Simplified interface with digital control circuits.
• Reliable Performance: Provides stable and consistent performance.

Technical Specifications

The ZXMN3A04DN8 has a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 4.7A per channel. The on-resistance (RDS(on)) is typically 45 mΩ at VGS = 10V. The gate threshold voltage (VGS(th)) is typically 2.1V. The total gate charge is 6.3 nC. It comes in a SO-8 surface-mount package. The operating temperature range is -55°C to +150°C.