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ZVN2110G

Part No ZVN2110G
Manufacturer Zetex Semiconductors
Catalog Electronic Wholesale
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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Manufacturer Zetex Semiconductors
Win Source Part Number 1283318-ZVN2110G
Manufacturer Homepage www.diodes.com/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN2110G CAD Model

Description

The ZVN2110G is a 100V N-channel enhancement mode vertical DMOS (Double-Diffused Metal-Oxide-Semiconductor) transistor manufactured by Zetex Semiconductors, now part of Diodes Incorporated. It's designed for high voltage, low current switching applications, known for its fast switching speed and robust performance.

Applications:

  • High-side switching: Used to switch power to loads connected to the positive supply rail.
  • Analog switches: Employed in circuits where analog signals need to be switched on or off.
  • Relay driving: Can be used to control relays by switching the current to the relay coil.
  • LED driving: Suitable for driving LEDs in various lighting applications.
  • Small signal amplification: Can be used in amplifier circuits requiring high input impedance.

Features:

  • High voltage operation: Rated for operation up to 100V.
  • Low threshold voltage: Enables easy driving from logic-level signals.
  • Fast switching speed: Provides quick turn-on and turn-off times.
  • High input impedance: Minimizes loading on the driving circuit.
  • Low gate drive power: Requires minimal power to switch the device on or off.

Benefits:

  • Simplified design: Low threshold voltage simplifies gate drive requirements.
  • Fast response: Fast switching speed allows for quick and efficient control.
  • Reduced power consumption: Low gate drive power minimizes power losses.
  • Improved signal integrity: High input impedance minimizes signal loading.
  • Wide operating voltage range: Can be used in a variety of applications with different voltage levels.

Additional Details:

The ZVN2110G typically has a continuous drain current (ID) rating of around 240mA. The gate threshold voltage (VGS(th)) is typically around 2V, making it easily driven by standard logic levels. The device is commonly available in a through-hole TO-92 package or a surface-mount SOT-23 package. It is important to observe the maximum voltage and current ratings to ensure reliable operation. The drain-source on-resistance (RDS(on)) is a key parameter, directly affecting power dissipation when the device is conducting.

Proper decoupling capacitors should be used near the device to minimize noise and ensure stable operation. Also, a gate resistor can be used to limit the gate current and prevent oscillations. Refer to the datasheet from Diodes Incorporated for detailed specifications, application notes, and recommended operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9013 $58.5845
160+ $0.7396 $118.3360
245+ $0.7165 $175.5425
335+ $0.6934 $232.2890
435+ $0.6703 $291.5805
580+ $0.6010 $348.5800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,040 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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