The NCE30TD60B is an N-channel enhancement mode power MOSFET manufactured by Wuxi. It is designed for high-voltage, high-speed switching applications. This MOSFET utilizes advanced trench technology and design to provide excellent RDS(on) and low gate charge.

Applications:

• DC-DC converters
• Power inverters
• Motor control
• LED lighting
• Power management systems

Features:

• Low RDS(on): Reduces power loss and improves efficiency.
• Low Gate Charge: Enables high-speed switching.
• Avalanche Rated: Provides robust performance in demanding applications.
• Trench Technology: Enhances device performance and reliability.
• Lead-Free: Compliant with RoHS directives.

Benefits:

• Improved energy efficiency in power conversion systems.
• Faster switching speeds.
• Increased reliability and robustness.
• Simplified circuit design.
• Environmentally friendly.

Additional Details:

The NCE30TD60B has a drain-source voltage (VDS) rating of 600V and a continuous drain current (ID) rating that varies based on the specific package and operating conditions, typically around 30A. The on-resistance (RDS(on)) is very low. It is available in a TO-220 package. This MOSFET is commonly used in power supplies, motor drivers, and other power electronic circuits.