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Same model may have multiple batches, images only for reference.
NXPSC106506Q Real Image
Same model may have multiple batches, images only for reference.

NXPSC106506Q

Part No NXPSC106506Q
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V 10A TO220AC / Diode Silicon Carbide Schottky 650 V 10A Through Hole TO-220AC
Datasheet
NXPSC106506Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr WeEn Semiconductors
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 250 µA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction 175°C (Max)
Base Product Number NXPSC
ECCN EAR99
HTSUS 8541.10.0080
Other Names 934072075127
Standard Package 1,000
Win Source Part Number 959149-NXPSC106506Q
Ultra Librarian 3D Model Ultra Librarian NXPSC106506Q CAD Model

Description

The NXPSC106506Q is a diode rectifier component manufactured by WeEn Semiconductors.

  • Type: Silicon Carbide Schottky Diode
  • Maximum DC Reverse Voltage: 650V
  • Average Rectified Current: 10A
  • Reverse Recovery Time: 0ns
  • Forward Voltage: 1.7V @ 10A
  • Capacitance: 300pF @ 1V and 1MHz
  • Package/Case: TO-220-2
  • Win Source Part Number: 959149-NXPSC106506Q

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