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Same model may have multiple batches, images only for reference.
NXPSC04650Q Real Image
Same model may have multiple batches, images only for reference.

NXPSC04650Q

Part No NXPSC04650Q
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V 4A TO220AC / Diode Silicon Carbide Schottky 650 V 4A Through Hole TO-220AC
Datasheet
NXPSC04650Q Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr WeEn Semiconductors
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 170 µA @ 650 V
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction 175°C (Max)
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names 934068072127,1740-1225
Standard Package 1,000
Win Source Part Number 1083044-NXPSC04650Q
Ultra Librarian 3D Model Ultra Librarian NXPSC04650Q CAD Model

Description

The NXPSC04650Q is a silicon carbide Schottky diode designed for use in discrete semiconductor products.

  • Maximum Voltage: 650 V
  • Average Rectified Current (Io): 4A
  • Voltage Forward (Vf) (Max) @ If: 1.7 V @ 4 A
  • Current Reverse Leakage @ Vr: 170 μA @ 650 V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Reverse Recovery Time (trr): 0 ns
  • Operating Temperature Range: 175°C (Max)
  • Mounting Type: Through Hole
  • Package: TO-220-2
  • Supplied In: TO-220AC package

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