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NXPSC04650Q

Name: NXPSC04650Q
Brand: WeEn Semiconductors
SKU: 1083044
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	NXPSC04650Q
Manufacturer	WeEn Semiconductors
Catalog	Diodes, Rectifiers - Single
Description	DIODE SCHOTTKY 650V 4A TO220AC / Diode Silicon Carbide Schottky 650 V 4A Through Hole TO-220AC
Datasheet	NXPSC04650Q Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr	WeEn Semiconductors
Package	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	4A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 4 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	170 µA @ 650 V
Capacitance @ Vr, F	130pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Operating Temperature - Junction	175°C (Max)
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	934068072127,1740-1225
Standard Package	1,000
Win Source Part Number	1083044-NXPSC04650Q
Ultra Librarian 3D Model	Ultra Librarian NXPSC04650Q CAD Model

Alternative Products

Description

The NXPSC04650Q is a silicon carbide Schottky diode designed for use in discrete semiconductor products.

Maximum Voltage: 650 V
Average Rectified Current (Io): 4A
Voltage Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current Reverse Leakage @ Vr: 170 μA @ 650 V
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Operating Temperature Range: 175°C (Max)
Mounting Type: Through Hole
Package: TO-220-2
Supplied In: TO-220AC package

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