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Same model may have multiple batches, images only for reference.
VS-40MT120PHAPBF Vishay General Semiconductor - Diodes Division
Same model may have multiple batches, images only for reference.

VS-40MT120PHAPBF

Part No VS-40MT120PHAPBF
Manufacturer Vishay
Catalog IGBTs - Modules
Description MTP - HALF BRIDGE IGBT
Datasheet
VS-40MT120PHAPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202729-VS-40MT120PHAPBF
Manufacturer Vishay General Semiconductor - Diodes Division
Category Discrete Semiconductor Products- Transistors IGBTs -IGBT Modules
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 75 A
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian VS-40MT120PHAPBF CAD Model

Description

The 1202729 IGBT Module, presented by Vishay General Semiconductor - Diodes Division, is a half-bridge configuration transistor designed for high voltage and high power applications.

  • Configuration: Half-Bridge
  • Transistor Type: Trench Field Stop IGBT
  • Voltage: 1200V
  • Collector Current: 75A
  • Temperature Range: -40°C to 150°C
  • Mounting Type: Through-Hole
  • Status: Active

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