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Same model may have multiple batches, images only for reference.
SUP70060E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUP70060E-GE3

Part No SUP70060E-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 100V 131A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 131A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Maximum) at Id, Vgs 5.8mOhm at 30A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 81nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3330pF at 50V
Power Dissipation (Maximum) 200W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811313-SUP70060E-GE3
Ultra Librarian 3D Model Ultra Librarian SUP70060E-GE3 CAD Model

Description

This MOSFET component is manufactured by Vishay Siliconix and has a popularity rating of medium.

  • Package: TO-220AB
  • Maximum Power Dissipation: 200W (Tc)
  • Drive Voltage: 7.5V (max Rds On), 10V (min Rds On)
  • Drain to Source Voltage: 100V
  • Input Capacitance (Ciss): 3330pF @ 50V
  • Gate Charge (Qg): 81nC @ 10V
  • Current-Continuous Drain (Id) @ 25°C: 131A (Tc)
  • Vgs(th) (Maximum) @ Id: 4V @ 250μA
  • Maximum Vgs: ±20V

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