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SUM70030E-GE3

Part No SUM70030E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 150A TO263 / N-Channel 100 V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 2.88mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 214 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10870 pF @ 50 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SUM70030
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SUM70030E-GE3-ND,SUM70030E-GE3CT,SUM70030E-GE3DKR,SUM70030E-GE3TR
Standard Package 800
Win Source Part Number 962243-SUM70030E-GE3
Ultra Librarian 3D Model Ultra Librarian SUM70030E-GE3 CAD Model

Description

The Vishay Siliconix SUM70030E-GE3 is a TrenchFET® N-channel MOSFET that is widely used in various electronic devices.

  • Maximum Drain to Source Voltage: 100 V
  • Continuous Drain Current: 150A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 2.88mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Power Dissipation (max): 375W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.4392 $53.2704
28+ $3.6424 $101.9872
43+ $3.5286 $151.7298
59+ $3.4147 $201.4673
76+ $3.3009 $250.8684
102+ $2.9594 $301.8588
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,600 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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