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IRF640L

Part No IRF640L
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) | MOSFET N-CH 200V 18A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 180mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 70nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 3.1W, 130W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package I2PAK
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187114-IRF640L
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF640L CAD Model

Description

The IRF640L is an N-channel MOSFET transistor from Vishay Siliconix.

  • Mounting: Through-Hole
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Vds - Drain-Source Breakdown Voltage: 200V
  • Id - Continuous Drain Current: 18A
  • Rds On (Maximum) @ Id, Vgs: 180mOhm @ 11A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 70nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1300pF @ 25V
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 410 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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