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SQJQ910EL-T1_GE3

Part No SQJQ910EL-T1_GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2 N-CH 100V POWERPAK8X8 / Mosfet Array 100V 70A (Tc) 187W Surface Mount PowerPAK® 8 x 8 Dual
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Rds On (Max) @ Id, Vgs 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2832pF @ 50V
Power - Max 187W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 8 x 8 Dual
Supplier Device Package PowerPAK® 8 x 8 Dual
Base Product Number SQJQ910
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1336917-SQJQ910EL-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJQ910EL-T1_GE3 CAD Model

Description

The Vishay MOSFET is a reliable and efficient N-channel power transistor that is designed to handle a maximum power dissipation of 187W.

  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 70A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250µA
  • Maximum Gate Charge: 58nC @ 10V
  • Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
  • Application: Discrete Semiconductor Products
  • Package: PowerPAK® 8 x 8 Dual
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Supply and Demand Status: Unlimited

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.2663 $52.2608
38+ $2.6800 $101.8400
58+ $2.5963 $150.5854
80+ $2.5125 $201.0000
103+ $2.4288 $250.1664
138+ $2.1775 $300.4950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,034 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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