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SQJ848EP-T1-GE3

Part No SQJ848EP-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 192750-SQJ848EP-T1-GE3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQJ848EP-T1-GE3 CAD Model

Description

The SQJ848EP-T1-GE3 is a 60 V, N-Channel Power MOSFET from Vishay, optimized for high-efficiency power switching applications. Utilizing advanced trench MOSFET technology, this component boasts low on-resistance (RDS(on)) and gate charge (Qg), significantly reducing power losses and increasing overall efficiency. Its PowerPAK® SO-8 single package provides excellent thermal performance and maximizes board space utilization.

Applications

  • Synchronous Rectification in AC-DC and DC-DC Converters
  • Primary Side Switching in Isolated Converters
  • Load Switching
  • Motor Control
  • Battery Management Systems

Features

  • Low On-Resistance (RDS(on)): Reduces conduction losses, improving efficiency.
  • Low Gate Charge (Qg): Minimizes switching losses at high frequencies.
  • Trench MOSFET Technology: Enables high cell density and efficient current handling.
  • PowerPAK® SO-8 Single Package: Offers excellent thermal performance and compact size.
  • 100% Rg Tested: Ensures gate ruggedness and reliability.
  • Lead (Pb)-free and Halogen-free: Compliant with environmental standards.

Benefits

  • High Efficiency Power Conversion: Low RDS(on) and Qg translate to minimized power losses, resulting in high overall efficiency in switching applications.
  • Reduced Heat Dissipation: Lower power losses mean less heat generation, simplifying thermal management and potentially reducing the need for bulky heat sinks.
  • Compact System Design: The PowerPAK® SO-8 package allows for smaller, more space-efficient designs, crucial in portable and space-constrained applications.
  • Enhanced Reliability: Rugged design and 100% Rg testing ensure stable and reliable operation under various conditions.
  • Environmentally Conscious: Lead-free and halogen-free construction reduces environmental impact, meeting RoHS compliance.

Additional Details

The SQJ848EP-T1-GE3 is rated for a continuous drain current (ID) that varies based on the operating conditions and thermal management. The typical gate-source voltage (VGS) rating is ±20V. Designed for surface mount assembly, it is supplied in tape and reel packaging for automated manufacturing processes. This MOSFET is commonly used in applications requiring a balance of high efficiency, power density, and reliability, such as power adapters, battery chargers, and DC-DC converters in various electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.9032 $66.6120
75+ $1.5617 $117.1275
115+ $1.5128 $173.9720
160+ $1.4641 $234.2560
205+ $1.4153 $290.1365
275+ $1.2689 $348.9475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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