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SQD07N25-350H-GE3

Part No SQD07N25-350H-GE3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 192737-SQD07N25-350H-GE3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQD07N25-350H-GE3 CAD Model

Description

The SQD07N25-350H-GE3 is a robust N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This MOSFET is designed for high-efficiency switching applications, offering excellent performance characteristics and reliability. Vishay is a reputable manufacturer known for its wide range of semiconductor components, and this MOSFET reflects their commitment to quality and performance.

Applications

  • DC-DC Converters: Used as a switching element in DC-DC converters to regulate voltage levels efficiently.
  • Motor Control: Employed in motor control circuits for precise speed and torque control.
  • Power Inverters: Utilized in power inverters to convert DC power to AC power.
  • Power Supplies: Integrated into power supplies for efficient voltage regulation and switching.
  • Lighting Control: Used in LED lighting and other lighting control applications for efficient power management.

Features

  • N-Channel MOSFET: Provides efficient switching characteristics with low on-resistance.
  • Low On-Resistance (RDS(on)): Minimizes power losses and improves efficiency.
  • High Avalanche Energy: Withstands high avalanche energy, providing robustness and reliability.
  • Fast Switching Speed: Enables high-frequency switching operation for improved efficiency.
  • RoHS Compliant: Meets environmental standards for lead-free manufacturing.

Benefits

  • Improved Efficiency: Low on-resistance minimizes power dissipation, leading to higher energy efficiency.
  • Enhanced Reliability: High avalanche energy rating ensures robustness and long-term performance.
  • Reduced Heat Dissipation: Low RDS(on) reduces heat generation, simplifying thermal management.
  • Simplified Circuit Design: Fast switching speed allows for efficient operation in high-frequency applications.
  • Environmentally Friendly: RoHS compliance ensures adherence to environmental regulations.

Additional Details

The SQD07N25-350H-GE3 features a silicon-based semiconductor material with advanced manufacturing techniques to achieve optimal performance. The device is typically available in a through-hole or surface-mount package, depending on the specific application requirements. The technical specifications, such as drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and on-resistance (RDS(on)), should be carefully reviewed in the manufacturer's datasheet to ensure proper selection for the intended application. The device is designed to operate within specified temperature ranges and voltage limits, and adherence to these specifications is crucial for ensuring reliable operation. Vishay's rigorous quality control processes ensure that the SQD07N25-350H-GE3 meets the demanding requirements of modern power electronics applications.

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