The SQ4949EY-T1-BE3 is a P-Channel 30 V (D-S) MOSFET from Vishay. This MOSFET is designed to provide efficient power switching in a variety of applications.

Applications:

• Load Switching
• Power Management in Portable Devices
• DC-DC Converters
• Battery Management Systems

Features:

• Low On-Resistance: Reduces power loss and improves efficiency.
• Low Threshold Voltage: Enables operation with low voltage gate drives.
• Fast Switching Speed: Allows for high-frequency operation.
• TrenchFET® Power MOSFET Technology: Provides high power density.
• Halogen-Free According to IEC 61249-2-21 Definition

Benefits:

• Improved Efficiency: Low on-resistance minimizes power dissipation.
• Extended Battery Life: Efficient power management prolongs battery life in portable devices.
• Compact Design: High power density allows for smaller and lighter designs.
• Reliable Performance: Robust design ensures stable operation in demanding conditions.

Technical Specifications:

The SQ4949EY-T1-BE3 has a drain-source voltage (VDS) rating of -30V. The continuous drain current (ID) is -8.8A at VGS = -10V. The on-resistance (RDS(on)) is typically 17 mΩ at VGS = -10V. The threshold voltage is between -1V and -3V. It is packaged in a PowerPAK® SC-70 (Single) package.

This MOSFET is particularly well-suited for applications requiring high efficiency and compact size.