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Same model may have multiple batches, images only for reference.
SIZF906DT-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIZF906DT-T1-GE3

Part No SIZF906DT-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2 N-CH 30V 60A POWERPAIR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 60A (Tc)
Rds On (Maximum) at Id, Vgs 3.8mOhm at 15A, 10V, 1.17mOhm at 20A, 10V
Vgs(th) (Maximum) at Id 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 22nC at 4.5V, 92nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 2000pF at 15V, 8200pF at 15V
Power - Max 38W (Tc), 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-PowerWDFN
Supplier Device Package 8-PowerPair (6x5)
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811134-SIZF906DT-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIZF906DT-T1-GE3 CAD Model

Description

The Vishay Siliconix SIZF906DT-T1-GE3 is a 2 N-channel (half bridge) FET with a maximum drain-to-source voltage of 30V.

  • Power: 38W (Tc)
  • Package: 8-PowerWDFN
  • Manufacturer Pack Quantity: 3,000
  • MSL Level: 1
  • Rds On: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
  • Gate Charge: 22nC @ 4.5V, 92nC @ 4.5V
  • Input Capacitance: 2000pF @ 15V, 8200pF @ 15V
  • Continuous Drain Current: 60A (Tc)
  • Vgs(th): 2.2V @ 250μA

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Quantity Unit Price Ext. Price
50+ $1.0691 $53.4550
100+ $1.0014 $100.1400
160+ $0.9676 $154.8160
225+ $0.8999 $202.4775
290+ $0.8661 $251.1690
365+ $0.8323 $303.7895
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