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SIS476DN-T1-GE3

Part No SIS476DN-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 30V 40A 1212-8 PWR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 40A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 2.5mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 77nC at 10V
Gate Source Voltage (Maximum) +20V, -16V
Input Capacitance (Ciss) (Maximum) at Vds 3595pF at 15V
Power Dissipation (Maximum) 3.7W, 52W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK 1212-8
Manufacturer Package PowerPAK 1212-8
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 716224-SIS476DN-T1-GE3
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIS476DN-T1-GE3 CAD Model

Description

The Vishay Siliconix electronic component is a high-performance MOSFET designed to provide excellent performance and reliability.

  • Supply and Demand: Sufficient
  • Packaging: PowerPAK 1212-8
  • Mounting Style: SMD
  • FET Feature: -
  • Transistor Polarity: N-Channel
  • Drive Voltage (Rds On, Vgs @ Id): 4.5V
  • Drive Voltage (Rds On, Vgs @ Id) Max Rds On: 10V
  • Temperature Range: -55°C to 150°C
  • Manufacturer Package: PowerPAK 1212-8
  • Power Dissipation (Max): 3.7W
  • Power Dissipation (Max) 2: 52W
  • Win Source Part Number: 716224-SIS476DN-T1-GE3

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7689 $53.8230
160+ $0.6309 $100.9440
250+ $0.6112 $152.8000
340+ $0.5915 $201.1100
440+ $0.5718 $251.5920
590+ $0.5126 $302.4340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,983 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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Shipping Information

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