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SIRA90DP-T1-GE3

Part No SIRA90DP-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 30V 100A POWERPAKSO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 0.8mOhm at 20A, 10V
Vgs(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 153nC at 10V
Maximum Vgs +20V, -16V
Input Capacitance (Ciss) (Maximum) at Vds 10180pF at 15V
Power Dissipation (Maximum) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK SO-8
Manufacturer Package PowerPAK SO-8
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812133-SIRA90DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIRA90DP-T1-GE3 CAD Model

Description

The SIRA90DP-T1-GE3 is an N-channel MOSFET from Vishay Siliconix.

  • Drain-to-Source Voltage (Vdss): 30V
  • Maximum Power Dissipation (Tc): 104W
  • FET Type: N-channel
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Package: PowerPAK SO-8
  • Package Type: Reel
  • Continuous Drain Current (Id) (Tc): 100A
  • Input Capacitance (Ciss) @ 15V: 10180pF
  • Operating Temperature Range: -55°C to 150°C
  • Market Popularity: Low
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8808 $51.8544
43+ $2.3638 $101.6434
66+ $2.2899 $151.1334
91+ $2.2160 $201.6560
117+ $2.1422 $250.6374
157+ $1.9206 $301.5342
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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