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Same model may have multiple batches, images only for reference.
SIRA50ADP-T1-RE3 Real Image
Same model may have multiple batches, images only for reference.

SIRA50ADP-T1-RE3

Part No SIRA50ADP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 54.8A/219A PPAK / N-Channel 40 V 54.8A (Ta), 219A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
SIRA50ADP-T1-RE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 54.8A (Ta), 219A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.04mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 20 V
Power Dissipation (Max) 6.25W (Ta), 100W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIRA50ADP-T1-RE3TR,SIRA50ADP-T1-RE3DKR,SIRA50ADP-T1-RE3CT
Standard Package 3,000
Win Source Part Number 970251-SIRA50ADP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIRA50ADP-T1-RE3 CAD Model

Description

The SIRA50ADP-T1-RE3 is a MOSFET transistor designed for use in discrete semiconductor products.

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET Gen IV
  • Maximum Drain to Source Voltage: 40V
  • Continuous Drain Current: 54.8A
  • Features: Low Rds On and High Input Capacitance

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Quantity Unit Price Ext. Price
45+ $1.1240 $50.5800
110+ $0.9223 $101.4530
170+ $0.8935 $151.8950
235+ $0.8647 $203.2045
300+ $0.8358 $250.7400
405+ $0.7494 $303.5070
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Availability: 3,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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