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SIRA36DP-T1-GE3

Part No SIRA36DP-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 30V 40A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 2.8mOhm at 20A, 10V
Vgs(th) (Maximum) at Id 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 56nC at 10V
Maximum Vgs +20V, -16V
Input Capacitance (Ciss) (Maximum) at Vds 2815pF at 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK SO-8
Manufacturer Package PowerPAK SO-8
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 807652-SIRA36DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIRA36DP-T1-GE3 CAD Model

Description

The Vishay Siliconix 807652-SIRA36DP-T1-GE3 is an N-channel MOSFET (Metal Oxide) type electronic component designed for use in various applications.

  • Package: Reel
  • Mounting Style: SMD
  • Drain to Source Voltage (Vdss): 30V
  • Rds On (Maximum) @ Id, Vgs: 2.8mOhm @ 20A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2815pF @ 15V
  • Current Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Vgs(th) (Maximum) @ Id: 2.2V @ 250μA
  • Maximum Vgs: +20V, -16V
  • Operating Temperature Range: -55°C ~ 150°C
  • ECCN: EAR99
  • Mfr: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8221 $53.4365
150+ $0.6745 $101.1750
230+ $0.6535 $150.3050
320+ $0.6324 $202.3680
410+ $0.6113 $250.6330
550+ $0.5481 $301.4550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,900 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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