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SIJ470DP-T1-GE3

Part No SIJ470DP-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 100V 58.8A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 58.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Maximum) at Id, Vgs 9.1mOhm at 20A, 10V
Vgs(th) (Maximum) at Id 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 56nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2050pF at 50V
Power Dissipation (Maximum) 5W , 56.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK SO-8
Manufacturer Package PowerPAK SO-8
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812132-SIJ470DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIJ470DP-T1-GE3 CAD Model

Description

The SIJ470DP-T1-GE3 is an N-Channel MOSFET, manufactured by Vishay Siliconix.

  • Type: N-Channel MOSFET (Metal Oxide)
  • Market Popularity: Low
  • Supply and Demand Status: Limited
  • Drain to Source Voltage: 100V
  • Maximum Rds on @ 10V: 10V
  • Power Dissipation: 5W, 56.8W (Tc)
  • Operating Temperature Range: -55°C to 150°C
  • Gate Charge (Qg) (maximum) @ Vgs: 56nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 58.8A (Tc)
  • Maximum Vgs: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8979 $53.8740
140+ $0.7368 $103.1520
215+ $0.7137 $153.4455
290+ $0.6907 $200.3030
375+ $0.6677 $250.3875
505+ $0.5986 $302.2930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,492 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipping Information

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