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Same model may have multiple batches, images only for reference.
SIHP7N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP7N60E-GE3

Part No SIHP7N60E-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 600V 7A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 600mOhm at 3.5A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 40nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 680pF at 100V
Power Dissipation (Maximum) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812183-SIHP7N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP7N60E-GE3 CAD Model

Description

The Vishay Siliconix SIHP7N60E-GE3 is an electronic component manufactured by Vishay Siliconix.

  • Win Source Part Number: 812183-SIHP7N60E-GE3
  • Supplier Device Package: TO-220AB
  • Technology: MOSFET (Metal Oxide)
  • Power Dissipation: 78W (Tc)
  • Maximum Gate Charge @ 10V: 40nC
  • Maximum Vgs: ±30V
  • Popularity: Low
  • Supply and Demand Status: Limited

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