The SIHFR210TRL-GE3 is a power MOSFET from Vishay Semiconductors, optimized for high-efficiency power switching. It is designed to minimize power losses through a combination of low on-state resistance (Rds(on)) and gate charge (Qg). This results in cooler operation and improved performance in a variety of applications.

Applications:

• Synchronous Rectification in DC-DC converters
• Power Inverters
• Motor Drives
• Load Switching
• Power Management in Portable Devices

Features:

• Low On-Resistance (Rds(on)): Reduces conduction losses, improving efficiency.
• Low Gate Charge (Qg): Minimizes switching losses, enabling higher frequency operation.
• Avalanche Rated: Provides increased robustness and reliability against voltage transients.
• Trench MOSFET Technology: Offers superior performance compared to planar technologies.
• Lead (Pb)-free and RoHS Compliant: Meets environmental regulations.
• Halogen-free according to IEC 61249-2-21 definition

Benefits:

• High Efficiency Power Conversion: Low Rds(on) and Qg enable efficient power transfer, minimizing energy waste.
• Reduced Thermal Stress: Lower power losses lead to reduced heat generation, improving component lifespan and system reliability.
• Robust Performance: Avalanche rating ensures the device can withstand voltage spikes, increasing system robustness.
• High-Frequency Operation: Low gate charge allows for efficient switching at higher frequencies, enabling smaller and more compact designs.
• Environmentally Responsible: Lead-free and RoHS compliant, reducing environmental impact.

Additional Details:

The SIHFR210TRL-GE3 is packaged in a PowerPAK® SO-8 package, ideal for surface mount assembly. Key specifications include a drain-source voltage (Vds) rating of 200V, a continuous drain current (Id) of up to 17A (dependent on operating conditions and thermal management), and a typical Rds(on) of 79 mΩ at Vgs = 10V. The device is designed to operate within a broad temperature range. Gate threshold voltage is typically 4V. This is an N-Channel MOSFET.