The SIHFR110TRL-GE3 is a power MOSFET from Vishay Semiconductors, designed for high-efficiency switching applications. This device leverages advanced trench MOSFET technology to minimize on-state resistance (Rds(on)) and gate charge (Qg), resulting in reduced power losses and improved overall system performance.

Applications:

• Synchronous Rectification in AC-DC and DC-DC converters
• Motor control circuits
• Uninterruptible Power Supplies (UPS)
• Battery management systems
• Power tool applications

Features:

• Low on-state resistance (Rds(on)): Minimizes conduction losses for improved efficiency.
• Low gate charge (Qg): Reduces switching losses for higher frequency operation.
• Avalanche rated: Provides robustness against voltage transients.
• Trench MOSFET technology: Offers superior performance compared to planar MOSFETs.
• Lead (Pb)-free and RoHS compliant: Environmentally friendly design.
• Halogen-free according to IEC 61249-2-21 definition

Benefits:

• Increased efficiency: Low Rds(on) and Qg contribute to lower power losses and higher efficiency in power conversion applications.
• Reduced heat dissipation: Lower power losses result in less heat generation, simplifying thermal management.
• Improved system reliability: Avalanche rating enhances robustness and protects against voltage spikes.
• Higher switching frequency capability: Low gate charge allows for operation at higher frequencies, enabling smaller and lighter designs.
• Environmentally friendly: Lead-free and RoHS compliant design minimizes environmental impact.

Additional Details:

The SIHFR110TRL-GE3 is typically supplied in a PowerPAK® SO-8 surface-mount package. This package offers excellent thermal performance and is suitable for automated assembly. Key specifications include a drain-source voltage (Vds) rating of 100V, a continuous drain current (Id) of up to 35A (depending on operating conditions), and an Rds(on) of typically 17 mΩ at Vgs = 10V. The device is designed for operation over a wide temperature range, making it suitable for demanding applications. Gate threshold voltage is typically 2.7V. This MOSFET is an N-Channel device.