The SI7380ADP-TI-E3 is an N-Channel Power MOSFET from Vishay. This MOSFET is designed for use in DC-DC converters, power management and load switching applications. It features a low on-resistance (RDS(on)) to minimize conduction losses and is designed for optimal efficiency.

Applications:

• DC-DC converters
• Power management
• Load switching
• Synchronous Rectification
• Adaptor/charger circuits

Features:

• N-Channel MOSFET
• Low on-resistance (RDS(on))
• TrenchFET® Power MOSFET Technology
• 100% Rg Tested
• Halogen-free and RoHS-compliant

Benefits:

• High efficiency in DC-DC converters due to low RDS(on).
• Reduced power consumption.
• Increased power density in power supplies.
• Minimized conduction losses.
• Environmentally friendly due to halogen-free construction.

Additional Details:

The SI7380ADP-TI-E3 N-Channel Power MOSFET is constructed using Vishay's advanced TrenchFET® technology, which enables the creation of devices with very low on-resistance in small packages. This results in reduced conduction losses and improved efficiency in power conversion applications. The device is designed to be lead free and RoHS compliant. It is supplied in a PowerPAK® SO-8 package. This MOSFET is commonly employed in synchronous rectification circuits to replace schottky diodes and reduce power loss. The SI7380ADP-TI-E3 is designed for surface mount technology (SMT), simplifying the PCB manufacturing process. The low gate charge of this MOSFET help to minimize switching losses and improve the overall efficiency of the system. Its compact size and efficient performance make it ideal for space-constrained applications. The “E3” suffix indicates that the device is halogen-free and RoHS compliant, meeting environmental standards.