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SI7252DP-T1-GE3

Name: SI7252DP-T1-GE3
Brand: Vishay
SKU: 813652
Availability: InStock
Rating: 4.84 (48 reviews)

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Part No	SI7252DP-T1-GE3
Manufacturer	Vishay
Catalog	FETs - Arrays
Description	MOSFET 2N-CH 100V 36.7A PPAK 8SO
Datasheet	SI7252DP-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Vishay Siliconix
Packaging	Reel
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) at 25°C	36.7A
Rds On (Maximum) at Id, Vgs	18mOhm at 15A, 10V
Vgs(th) (Maximum) at Id	3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	27nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds	1170pF at 50V
Power - Max	46W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Manufacturer Package	PowerPAK SO-8 Dual
Supplier Device Package	PowerPAK SO-8 Dual
Part Number Series	SI7252
Manufacturer Pack Quantity	3,000
MSL Level	1 (Unlimited)
Popularity	Low
Supply and Demand Status	Limited
Win Source Part Number	813655-SI7252DP-T1-GE3
Ultra Librarian 3D Model	Ultra Librarian SI7252DP-T1-GE3 CAD Model

Alternative Products

Description

The Vishay Siliconix SI7252DP-T1-GE3 is a dual N-channel logic level gate FET with a drain to source voltage of 100V and a power rating of 46W.

Rds On: 18mOhm @ 15A and 10V
Gate Charge: 27nC @ 10V
Input Capacitance: 1170pF @ 50V
Continuous Drain Current: 36.7A @ 25°C
Vgs(th): 3.5V @ 250μA
Package: PowerPAK SO-8 Dual
Operating Temperature Range: -55°C to 150°C
Popularity: Low

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
40+	$1.6094	$64.3760
90+	$1.3206	$118.8540
140+	$1.2793	$179.1020
190+	$1.2381	$235.2390
245+	$1.1968	$293.2160
325+	$1.0730	$348.7250

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 8,800 pieces

MOQ: 40 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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SI7252DP-T1-GE3

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